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| geometry principal device type ctltvs6v2 gross die per 5 inch wafer 374,272 process CPZ34R transient voltage suppressor 6.2 volt tvs chip process details die size 6.7 x 6.7 mils die thickness 3.54 mils anode bonding pad area 4.5 x 4.5 mils top side metalization al - 30,000? back side metalization au.as - 12,000? www.centralsemi.com r0 (17-january 2013)
process CPZ34R typical electrical characteristics www.centralsemi.com r0 (17-january 2013) |
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